FP25R12KE3BOSA1 Transistor IGBT Module N-CH 1200V 40A Siemens s7-1200 50 Package size unit of

50 Package size unit of measure CM Quantity Unit 0 Piece Packaging Quantity 1 Additional Product Information EAN 4025515054122 UPC 662643271478 Commodity Code 85389091 LKZ_FDB/ CatalogID ST9-E5 Product Group 4234 Group Code R151 Country of origin Germany

Manufacturer: Mitsubishi Electric Product: IGBT Silicon Modules Configuration: Dual Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 5 V Continuous Collector Current at 25 C: 100 A Gate-Emitter Leakage Current: 0

for online diagnostics of the PROFIBUS cable

MICROMASTER 420 built-in class A filter 380-480 V 3 AC +10/-10% 47-63 Hz constant torque 3 kW overload 150% for 60 s square-law torque 3 kW 202x 149x 172 (HxWxD) degree of protection IP20 ambient temperature -10+50 °C without AOP/BOP

FP25R12KE3BOSA1 Transistor IGBT Module N-CH 1200V 40A Siemens s7-1200 50 Package size unit ofFP25R12KE3BOSA1 Transistor IGBT Module N CH 1200V 40A